JPH0371776B2 - - Google Patents

Info

Publication number
JPH0371776B2
JPH0371776B2 JP58127058A JP12705883A JPH0371776B2 JP H0371776 B2 JPH0371776 B2 JP H0371776B2 JP 58127058 A JP58127058 A JP 58127058A JP 12705883 A JP12705883 A JP 12705883A JP H0371776 B2 JPH0371776 B2 JP H0371776B2
Authority
JP
Japan
Prior art keywords
layer
barrier
heterojunction
gate
doped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58127058A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59124171A (ja
Inventor
Joodan Roozenbaagu Jeemuzu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS59124171A publication Critical patent/JPS59124171A/ja
Publication of JPH0371776B2 publication Critical patent/JPH0371776B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/602—Heterojunction gate electrodes for FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
JP58127058A 1982-12-30 1983-07-14 ２重ヘテロ接合ｆｅｔ Granted JPS59124171A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/454,741 US4583105A (en) 1982-12-30 1982-12-30 Double heterojunction FET with ohmic semiconductor gate and controllable low threshold voltage
US454741 1982-12-30

Publications (2)

Publication Number Publication Date
JPS59124171A JPS59124171A (ja) 1984-07-18
JPH0371776B2 true JPH0371776B2 (en]) 1991-11-14

Family

ID=23805881

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58127058A Granted JPS59124171A (ja) 1982-12-30 1983-07-14 ２重ヘテロ接合ｆｅｔ

Country Status (4)

Country Link
US (1) US4583105A (en])
EP (1) EP0114962B1 (en])
JP (1) JPS59124171A (en])
DE (1) DE3376713D1 (en])

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3334167A1 (de) * 1983-09-21 1985-04-04 Siemens AG, 1000 Berlin und 8000 München Halbleiterdiode
JPS613465A (ja) * 1984-06-18 1986-01-09 Fujitsu Ltd 半導体装置及びその製造方法
GB2163002B (en) * 1984-08-08 1989-01-05 Japan Res Dev Corp Tunnel injection static induction transistor and its integrated circuit
US4641161A (en) * 1984-09-28 1987-02-03 Texas Instruments Incorporated Heterojunction device
DE3477624D1 (en) * 1984-12-18 1989-05-11 Ibm Low temperature tunneling transistor
GB2172742B (en) * 1985-03-21 1988-08-24 Stc Plc Photoconductor
JPS61241968A (ja) * 1985-04-19 1986-10-28 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 半導体記憶装置
US4616242A (en) * 1985-05-08 1986-10-07 International Business Machines Corporation Enhancement and depletion mode selection layer for field effect transistor
US4710478A (en) * 1985-05-20 1987-12-01 United States Of America As Represented By The Secretary Of The Navy Method for making germanium/gallium arsenide high mobility complementary logic transistors
US4689869A (en) * 1986-04-07 1987-09-01 International Business Machines Corporation Fabrication of insulated gate gallium arsenide FET with self-aligned source/drain and submicron channel length
US4860067A (en) * 1986-06-20 1989-08-22 International Business Machines Corporation Semiconductor heterostructure adapted for low temperature operation
JPS633467A (ja) * 1986-06-20 1988-01-08 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 半導体装置
EP0264932A1 (en) * 1986-10-24 1988-04-27 Sumitomo Electric Industries Limited Field effect transistor
US4962409A (en) * 1987-01-20 1990-10-09 International Business Machines Corporation Staggered bandgap gate field effect transistor
US4866491A (en) * 1987-02-06 1989-09-12 International Business Machines Corporation Heterojunction field effect transistor having gate threshold voltage capability
JPS63196079A (ja) * 1987-02-06 1988-08-15 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン ヘテロ接合ｆｅｔ
US4965645A (en) * 1987-03-20 1990-10-23 International Business Machines Corp. Saturable charge FET
JPS6412581A (en) * 1987-07-02 1989-01-17 Ibm Semiconductor device structure
US4821082A (en) * 1987-10-30 1989-04-11 International Business Machines Corporation Heterojunction bipolar transistor with substantially aligned energy levels
US5245207A (en) * 1989-04-21 1993-09-14 Nobuo Mikoshiba Integrated circuit
FR2689683B1 (fr) * 1992-04-07 1994-05-20 Thomson Composants Microondes Dispositif semiconducteur a transistors complementaires.
US6121642A (en) * 1998-07-20 2000-09-19 International Business Machines Corporation Junction mott transition field effect transistor (JMTFET) and switch for logic and memory applications
US6518621B1 (en) * 1999-09-14 2003-02-11 General Semiconductor, Inc. Trench DMOS transistor having reduced punch-through
US20040188703A1 (en) * 2003-03-07 2004-09-30 Tongwei Cheng Switch
US7271457B2 (en) * 2005-03-04 2007-09-18 Bae Systems Information And Electronic Systems Integration Inc. Abrupt channel doping profile for fermi threshold field effect transistors
US7465976B2 (en) * 2005-05-13 2008-12-16 Intel Corporation Tunneling field effect transistor using angled implants for forming asymmetric source/drain regions
CN102576727B (zh) 2010-06-23 2016-01-27 康奈尔大学 门控iii-v半导体结构和方法
TWI696290B (zh) * 2014-11-26 2020-06-11 南韓商三星電子股份有限公司 半導體元件、電子元件及電子元件端子結構
CN110828564B (zh) * 2018-08-13 2022-04-08 香港科技大学 具有半导体性栅极的场效应晶体管

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3673471A (en) * 1970-10-08 1972-06-27 Fairchild Camera Instr Co Doped semiconductor electrodes for mos type devices
US4151635A (en) * 1971-06-16 1979-05-01 Signetics Corporation Method for making a complementary silicon gate MOS structure
US4075652A (en) * 1974-04-17 1978-02-21 Matsushita Electronics Corporation Junction gate type gaas field-effect transistor and method of forming
EP0033037B1 (en) * 1979-12-28 1990-03-21 Fujitsu Limited Heterojunction semiconductor devices
FR2497603A1 (fr) * 1981-01-06 1982-07-09 Thomson Csf Transistor a faible temps de commutation, de type normalement bloquant
JPS5851574A (ja) * 1981-09-22 1983-03-26 Fujitsu Ltd 半導体装置
JPS58119671A (ja) * 1982-01-09 1983-07-16 Agency Of Ind Science & Technol 電界効果トランジスタ

Also Published As

Publication number Publication date
US4583105A (en) 1986-04-15
DE3376713D1 (en) 1988-06-23
EP0114962A2 (en) 1984-08-08
EP0114962A3 (en) 1985-07-31
EP0114962B1 (en) 1988-05-18
JPS59124171A (ja) 1984-07-18

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